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Home COUNTRY DACH

Infineon and Nvidia to develop gallium nitride power conversion tech for 800VDC data center racks

dcdby dcd
October 22, 2026
Reading Time: 5 mins read
in DACH, VENTURE CAPITAL
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Infineon has partnered with Nvidia to develop gallium nitride (GaN) power conversion technology for 800 VDC data center architectures.

The German chipmaker announced the tie-up at Nvidia’s GTC Berlin developer conference, building on a May 2025 agreement detailed in October 2025 that focused on serviceable, hot-swappable 800 VDC server racks.

The latest agreement will focus on developing high-voltage intermediate bus converters (IBCs). IBCs step down the main bus voltage feeding accelerator cards to a lower-voltage rail, allowing downstream stages to generate the core and point-of-load rails AI processors need.

Infineon said the multi-stage approach reduces distribution losses while meeting limits on board area, thermals, and uptime. It added that 800 VDC is being introduced alongside existing AC and lower-voltage DC architectures as an additional option for higher-density compute.

Infineon claims GaN switches faster than silicon and with lower losses, enabling switching frequencies up to 1MHz at the IBC stage. The company asserts this lets magnetics and passives shrink, increasing power density and reducing board height. The company said this matters as rack power levels approach the megawatt range.

Infineon’s GaN portfolio covers 800V-to-50V, 800V-to-12V, and 800V-to-6V conversion. Infineon pairs the devices with its PSoC Control C3 and EiceDRIVER product families to offer full IBC system solutions. It also offers IBC solutions in silicon and silicon carbide.

“AI is fundamentally reshaping the demands we place on power infrastructure, and semiconductors are at the heart of solving that challenge,” said Jochen Hanebeck, CEO, Infineon Technologies AG. “Our collaboration with Nvidia on 800V power architectures shows what is possible when deep semiconductor expertise meets the pace of innovation required by AI. Gallium nitride-based system solutions are a key enabler of this next generation of data centers, and Infineon is proud to help power the AI era from grid to core.”

The agreement follows a deal with Estonian power and storage systems supplier Skeleton Technologies last month, which will see the companies jointly explore and develop advanced architectures for the entire AI data center power chain, from the grid to the facility itself. This will include Solid State Transformers for medium-voltage AC-to-high-voltage DC conversion.

Infineon is one of Europe’s largest semiconductor manufacturers. Spun out of Siemens in 1999, the company specializes in power electronics, automotive microcontrollers, sensors, and security chips. Recently, it increased its research and development in power infrastructure for the data center sector, partnering with Korean electrical equipment manufacturer LS Electric to develop direct current power infrastructure for the AI data center market earlier this year.

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Read the orginal article: https://www.datacenterdynamics.com/en/news/infineon-and-nvidia-to-develop-gallium-nitride-power-conversion-tech-for-800vdc-data-center-racks/

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